| PART |
Description |
Maker |
| ISL6745 |
Bridge Controller with Precision Dead Time Control
|
INTERSIL[Intersil Corporation]
|
| IRS20124SPBF |
DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION
|
International Rectifier
|
| CAT24FC65GLI-TE13 CAT24FC66ZD2I-TE13 CAT24FC65 CAT |
LM5105 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10
LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay; Package: LLP; No of Pins: 10
Silver Mica Capacitor; Capacitance:1300pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY 连接器附
64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:14S; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Socket; Gender:Female 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5107 100V / 1.4A Peak Half Bridge Gate Driver; Package: SOIC NARROW; No of Pins: 8 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: MINI SOIC; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
WASHER & NUT KIT for PDB181 MODEL 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
|
http://
CATALYST[Catalyst Semiconductor]
Vishay Intertechnology, Inc.
BCD Semiconductor Manufacturing, Ltd.
NXP Semiconductors N.V.
Motorola Mobility Holdings, Inc.
Cooper Bussmann, Inc.
Microchip Technology, Inc.
|
| 5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59 |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow.
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
|
Aeroflex Circuit Technology
|
| 5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
| FRN-R-30 |
Dual-Element, Time-Delay Fuses Class RK5 - 250 Volt
|
Cooper Bussmann, Inc.
|
| FRN-R-8 FRN-R-10 H25030-1 H25060-2 H25060-1 |
FRN-R ?250Vac/125Vdc, 1?0-60A, Dual Element, Time-Delay Fuses
FUSETRON 250V Class RK5
|
Cooper Bussmann, Inc.
|
| 500L-058X181-502 500T-058X071-501 500T-058X071-502 |
5000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
500:5 A, 2 % ACCURACY CLASS, CURRENT TRANSFORMER
4000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
400:5 A, 3 % ACCURACY CLASS, CURRENT TRANSFORMER
750:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
2500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1200:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
|
GE Industrial Systems
|
| 00DF030.ZXB 00DF030.ZXF 00DF030.ZXFB 00DF100.ZXF 0 |
600V DEAD FRONT HOLDER
|
Littelfuse
|
| 138-1115 138-1112 138-1139 138-1113 138-1138 1414 |
Dead Blow Nylon Hammers
|
THOR communications
|
| DRM4000L-N00-232 |
DRM?000L Dead Reckoning Module
|
http://
Honeywell Solid State Electronics Center
|
| LP-CC-5-6/10 |
Low-Peak?LP-CC Class CC 600Vac/300Vdc, 1?-30A time-delay fuses
|
Cooper Bussmann, Inc.
|
|
